استرجاع مجاني وسهل
أفضل العروض
استرجاع مجاني وسهلأفضل العروض
إدفع 3 اقساط شهرية بقيمة ٢٣١٫٦٧ جنيه.
| الناشر | CAMBRIDGE UNIVERSITY PRESS |
| رقم الكتاب المعياري الدولي 10 | 1107635713 |
| اللغة | الإنجليزية |
| عن المؤلف | Yuan Taur is a Professor of Electrical and Computer Engineering at the University of California, San Diego. He spent twenty years at IBM's T. J. Watson Research Center where he won numerous invention and achievement awards. He is an IEEE Fellow, Editor-in-Chief of IEEE Electron Device Letters, and holds thirteen US patents. Tak H. Ning is an IBM Fellow at the T. J. Watson Research Center, New York, where he has worked for over 35 years. A Fellow of the IEEE and the American Physical Society and a member of the US National Academy of Engineering, he has authored more than 120 technical papers and holds 36 US patents. He has won several awards, including the ECS 2007 Gordon E. Moore Medal, the IEEE 1991 Jack A. Morton Award and the 1998 Pan Wen-Yuan Foundation Outstanding Research Award. |
| تاريخ النشر | 24-Jun-2013 |
| رقم الكتاب المعياري الدولي 13 | 9781107635715 |
| تنسيق الكتاب | غلاف ورقي |
| وصف الكتاب | Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices. |
| رقم الطبعة | 2 |
| عدد الصفحات | 680 |
