Nanoscale Transistors: Device Physics, Modeling and Simulation

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الناشر	Springer; Softcover reprint of hardcover 1st ed. 2006 edition
رقم الكتاب المعياري الدولي 10	1441939156
تنسيق الكتاب	Paperback
وصف الكتاب	Basic Concepts.- Devices, Circuits, and Systems.- The Ballistic Nanotransistor.- Scattering Theory of the MOSFET.- Nanowire Field-Effect Transistors.- Transistors at the Molecular Scale.
تاريخ النشر	29 October 2010

رقم الكتاب المعياري الدولي 13	9781441939159
الكاتب	Mark Lundstrom
اللغة	English
عن المؤلف	Mark S. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests center on the physics of semiconductor devices, especially nanoscale transistors. His previous work includes studies of heterostructure devices, solar cells, heterojunction bipolar transistors and semiconductor lasers. During the course of his Purdue career, Lundstrom has served as director of the Optoelectronics Research Center and assistant dean of the Schools of Engineering. He is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for teaching and research ― most recently the 2002 IEEE Cledo Brunetti Award and the 2002 Semiconductor Research Corporation Technical Achievement Award for his work with his colleague, S. Datta, on nanoscale electronics.Jing Guo is an assistant professor of Electrical and Computer Engineering at University of Florida, Gainesville. His has worked on the theory, modeling and simulation of a variety of nanotransistors, including silicon nanotransistors, carbon nanotube transistors, and single electron transistors, in close collaboration with experimentalists. His current research interests focus on modeling and simulation of nanoscale devices, carbon nanotube electronics and optoelectronics, quantum transport, physics of nanoscale transistors, and parallel computation.
عدد الصفحات	228 pages

مجموع السلة  422.00

Nanoscale Transistors: Device Physics, Modeling and Simulation

422.00

 422